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AO4480 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4480 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD Protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AO4480 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 40V ID = 14A (VGS = 10V) RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 15.5m (VGS = 4.5V) ESD Rating: 4KV HBM UIS Tested Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G
SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25C Power Dissipation B Avalanche Current TA=70C TA=25C TA=70C IDSM IDM PD IAR EAR TJ, TSTG
S
Maximum 40 20 14 11 70 3.1 2.0 30 135 -55 to 150
Units V V A
W A mJ C
Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 30 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4480
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=14A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250uA, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=14A TJ=125C 1 70 9 13 12 50 0.7 1 4 1600 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 320 100 3.4 22 VGS=10V, VDS=20V, ID=14A 10.5 4.2 4.8 3.5 VGS=10V, VDS=20V, RL=1.5, RGEN=3 IF=14A, dI/dt=100A/s 6 13.2 3.5 31 33 1920 15.5 11.5 2 Min 40 1 5 100 3 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=14A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 80 60 ID (A) ID(A) 40 20 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 14 VGS=4.5V Normalized On-Resistance 12 RDS(ON) (m) 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 ID=14A RDS(ON) (m) IS (A) 20 125C 15 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 125C 1.6 VGS=10V ID=14A 5V 4V 60 40 20 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 80 125C 100 VDS=5V -40C 25C
VGS=3.5V
VGS=3V
125C
-40C 25C
500 150 60
10
VGS=4.5V ID=5A
8
VGS=10V
6 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30
25
10
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 24 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100s 10.0 ID (Amps) RDS(ON) limited TJ(Max)=150C TA=25C 10ms 1ms Power (W) 10s 80 60 40 20 0 0.001 VDS=20V ID=14A Capacitance (pF) 2400 2000 1600 1200 800 400 0 0 5 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 40 Coss Crss
Ciss
100
500 150 60
TJ(Max)=150C Tc=25C
100ms 10s 1s DC
1.0
0.1
0.0 0.01
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.1
100
0.01
0.1
1
10
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Single Pulse 0.0001 0.001 0.01 0.1 1 Ton 10
0.01 0.00001
T 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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